STP1013 dual p channel enhancement mode mosfet 0.45a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP1013 2009. v1 description STP1013 is the pchannel enhancement mode power fi eld effect transistors are produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize onstate resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other better y powered circuits where highside switching, low inline power loss, and re sistance to transients are needed. pin configuration sot-523 / sc-89 part marking feature 20v/0.45a, r ds(on) =520ohm @v gs =4.5v 20v/0.35a, r ds(on) =700ohm @v gs =2.5v 20v/0.25a, r ds(on) =950ohm @v gs =1.8v super high density cell design for extremely low r ds(on) exceptional low onresistance and maximum dc current capability sot523 / sc89 package design
STP1013 dual p channel enhancement mode mosfet 0.45a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP1013 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 20 v gatesource voltage v gss 12 v t a =25 0.45 continuous drain current (t j =150 ) t a =80 i d 0.35 a pulsed drain current i dm 1.0 a continuous source current (diode conduction) i s 0.3 a t a =25 0.27 power dissipation t a =70 p d 0.16 w operation junction temperature t j 55/150 storage temperature range t stg 55/150
STP1013 dual p channel enhancement mode mosfet 0.45a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP1013 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit off characteristics drainsource breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.35 0.8 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 5 ua onstate drain current i d(on) v ds Q 4.5v,v gs =5v 0.7 a v gs =4.5v,i d =0.45a 420 520 v gs =2.5v,i d =0.35a 580 700 drainsource onresistance r ds(on) v gs =1.8v,i d =0.25a 750 950 m forward transconductance g fs v ds =10v,i d =0.25a 0.4 s diode forward voltage v sd i s =0.15a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 1.5 2.0 gatesource charge q gs 0.3 gatedrain charge q gd v ds =10v,v gs =4.5v, v ds =0.6a 0.35 nc t d(on) 5 10 turnon time t r 15 25 t d(off) 8 15 turnoff time t f v dd =10v, rl=10, i d =0.4a, v gen =4.5v, rg=6 1.4 1.8 ns
STP1013 dual p channel enhancement mode mosfet 0.45a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP1013 2009. v1 typical characterictics
STP1013 dual p channel enhancement mode mosfet 0.45a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP1013 2009. v1 typical characterictics
STP1013 dual p channel enhancement mode mosfet 0.45a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP1013 2009. v1 sot523 (sc-89) package outline
STP1013 dual p channel enhancement mode mosfet 0.45a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP1013 2009. v1
|
